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OP950;中文规格书,Datasheet资料

2021-04-22 来源:尚车旅游网
Product Bulletin OP950June 1996

PIN Sili con Pho to di ode

Type OP950

Features

•Wide receiving angle

•Linear response vs. irradiance•Fast switching time

•Side-looking package ideal for space

limited applications

Absolute Maximum Ratings (TA = 25o C un less otherwise noted)

Reverse Breakdown Volt age......................................... 60 VStor age and Op er at ing Tem pera ture Range.................. -40o C to +100o CLead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ingiron]......................................................... 260o C(1)Power Dis si pa tion.............................................100 mW(2)

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.

Max. 20 grams force may be applied to leads when soldering.(2) Derate linearly 1.67 mW/o C above 25o C.

(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a

radiometric intensity level which varies less than 10% over the entire lens surface of thephotodiode being tested.

(4) To calculate typical dark current in µA, use the formula ID = 10(0.042 TA-1.5) where TA is

ambient temperature in o C.

Description

The OP950 device consists of a PINsilicon photodiode molded in a clearepoxy package which allows spectralresponse from visible to infrared lightwavelengths. The wide receiving angleprovides relatively even reception over alarge area. The side-looking package isdesigned for easy PC board mounting.This photodiode is mechanically andspectrally matched to Optek’s GaAs andGaAlAs series of infrared emittingdiodes.

Typical Performance Curves

Coupling Characteristics

OP950 and OP240

VR = 5 VIF = 20 mA

Relative Response vs.

Wavelength

λ - Wave length - nm

Dis tance Between Lens Tips - inches

Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396

3-58

http://oneic.com/

Type OP950

Electrical Characteristics (TA = 25o C un less otherwise noted)SYM BOL

ILIDV(BR)VFCTtr, tf

PARAMETER

Reverse Light CurrentReverse Dark CurrentReverse Breakdown VoltageForward VoltageTotal CapacitanceRise Time, Fall Time

MINTYP

8

1

60

MAXUNITS

18601.2

µAnAVVpFns

VR = 5 V, Ee = 1 mW/cm2(3)VR = 30 V, Ee = 0IR = 100 µAIF = 1 mA

TEST CONDITIONS

45

VR = 20 V, Ee = 0, f = 1.0 MHzVR = 20 V, λ = 850 nm, RL = 50 Ω

Typical Performance Curves

Normalized Light Current vs

Reverse VoltageTotal Capacitance vs Reverse VoltageNormalized Light and DarkCurrent vs Ambient TemperatureVR = 5 Vλ = 935 nmNormalized toTA = 25o C

TA = 25o C

Ee = 0 mW/cm2f = 1 MHz

TA = 25 Cλ = 935 nm

Normalized to VR = 5 Vo

Light CurrentDark Current

VR - Reverse Voltage - VVR - Reverse Voltage - V

TA - Ambient Temperature - oC

Light Current vs. IrradianceSwitching Time Test Circuit

Light Current vs. Angular

Displacement

VR = 5 VTA = 25o Cλ = 935 nm

Test Conditions:λ = 935 nmVR = 5 V

Distance Lens to Lens = 1.5 inches

Ee - Irradiance - mW/cm2

θ - Angular Displacement - Deg.

Op tek re serves the right to make changes at any time in or der to im prove de sign and to supply the best prod uct pos si ble.

Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396

3-59

http://oneic.com/

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OPTEK-TECHNOLOGYOP950

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