专利名称：Semiconductor Memory Device And Method
Of Forming The Same
发明人：Jingyun Kim,Myoungbum Lee,Kihyun Hwang申请号：US13442804申请日：20120409
公开号：US20120193700A1公开日：20120802
专利附图：
摘要：Semiconductor memory devices and methods of forming semiconductormemory devices are provided. The methods may include forming insulation layers andcell gate layers that are alternately stacked on a substrate, forming an opening by
successively patterning through the cell gate layers and the insulation layers, andforming selectively conductive barriers on sidewalls of the cell gate layers in the opening.
申请人：Jingyun Kim,Myoungbum Lee,Kihyun Hwang
地址：Yongin-si KR,Seoul KR,Seongnam-si KR
国籍：KR,KR,KR
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